may 2011 ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 www.fairchildsemi.com 1 FDMS7698 n-channel powertrench ? mosfet g s s s d d d d 5 6 7 8 3 2 1 4 bottom power 56 top pin 1 g s s s d d d d FDMS7698 n-channel powertrench ? mosfet 30 v, 22 a, 10 m features ? max r ds(on) = 10 m at v gs = 10 v, i d = 13.5 a ? max r ds(on) = 15 m at v gs = 4.5 v, i d = 11.0 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? next generation enhanced body diode technology, engineered for soft recovery ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficiency and to minimize switch node ringing of dc/dc converters using either synchronous or conventional switching pwm cont rollers. it has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. applications ? imvp vcore switching for notebook ? vrm vcore switching for desktop and server ? oringfet / load switching ? dc-dc conversion mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 22 a -continuous (silicon limited) t c = 25 c 44 -continuous t a = 25 c (note 1a) 13.5 -pulsed 50 e as single pulse avalanche energy (note 3) 29 mj p d power dissipation t c = 25 c 29 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 4.4 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS7698 FDMS7698 power 56 13 ?? 12 mm 3000 units
FDMS7698 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 16 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 2.0 3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 13.5 a 8.1 10 m v gs = 4.5 v, i d = 11.0 a 12.2 15 v gs = 10 v, i d = 13.5 a t j = 125 c 11 14 g fs forward transconductance v ds = 5 v, i d = 13.5 a 53 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 1205 1605 pf c oss output capacitance 370 495 pf c rss reverse transfer capacitance 35 55 pf r g gate resistance 0.3 1.6 3.2 t d(on) turn-on delay time v dd = 15 v, i d = 13.5 a, v gs = 10 v, r gen = 6 918ns t r rise time 310ns t d(off) turn-off delay time 20 36 ns t f fall time 310ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 13.5 a 17 24 nc q g total gate charge v gs = 0 v to 4.5 v 7.5 12 nc q gs gate to source charge 3.9 nc q gd gate to drain ?miller? charge 2.0 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.75 1.1 v v gs = 0 v, i s = 13.5 a (note 2) 0.86 1.2 t rr reverse recovery time i f = 13.5 a, di/dt = 100 a/ s 24 38 ns q rr reverse recovery charge 8 15 nc t rr reverse recovery time i f = 13.5 a, di/dt = 300 a/ s 19 34 ns q rr reverse recovery charge 13 24 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 29 mj is based on starting t j = 25 c, l = 0.3 mh, i as = 14 a, v dd = 27 v, v gs = 10 v. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. b) 125 c/w when mounted on a minimum pad of 2 oz copper. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper a)
FDMS7698 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 v gs = 6 v v gs = 10 v v gs = 4.5 v v gs = 4 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 1020304050 0 1 2 3 4 5 v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 3.5 v v gs = 4 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 13.5 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 5 10 15 20 25 30 t j = 125 o c i d = 13.5 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 10 20 30 40 50 t j = 25 o c t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 50 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS7698 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 figure 7. 0 3 6 9 12 15 18 0 2 4 6 8 10 i d = 13.5 a v dd = 10 v v dd =15 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 10 100 1000 2000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 40 1 5 10 15 20 25 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 limited by package v gs = 4.5 v r t jc = 4.4 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature figure 11. 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 100 us 10 s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c fo rw ard bi as safe operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m po wer dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMS7698 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS7698 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 dimensional outlin e and pad layout
7 www.fairchildsemi.com FDMS7698 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMS7698 rev.c1 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. ? 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